Infineon IPN70R1K4P7S: A High-Performance 700V CoolMOS™ Power Transistor

Release date:2025-11-05 Number of clicks:101

Infineon IPN70R1K4P7S: A High-Performance 700V CoolMOS™ Power Transistor

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPN70R1K4P7S stands out as a state-of-the-art 700V CoolMOS™ power transistor engineered to meet these demanding requirements. Leveraging Infineon’s advanced superjunction (SJ) technology, this device is tailored for high-efficiency switched-mode power supplies (SMPS), industrial power systems, and other applications where high voltage and low losses are critical.

A key highlight of the IPN70R1K4P7S is its exceptionally low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall system efficiency. Even at high switching frequencies, the transistor maintains superior performance, enabling designers to create more compact and energy-efficient power solutions. The low gate charge (Qg) and reduced output capacitance (Coss) further contribute to minimized switching losses, making it ideal for high-frequency operations.

Thermal management is another area where this CoolMOS™ excels. The device is designed to operate reliably at elevated temperatures, thanks to its low thermal resistance and robust package. This ensures long-term stability and durability even under strenuous conditions, reducing the need for complex cooling mechanisms and lowering system costs.

Moreover, the IPN70R1K4P7S incorporates enhanced body diode characteristics, which improve reverse recovery performance and reduce electromagnetic interference (EMI). This makes it particularly suitable for applications such as power factor correction (PFC), LED lighting, and server power supplies.

ICGOOODFIND:

The Infineon IPN70R1K4P7S sets a new benchmark for high-voltage power transistors with its low RDS(on), excellent switching performance, and superior thermal behavior. It is an optimal choice for designers seeking to enhance power density and efficiency in next-generation electronic systems.

Keywords:

Power Transistor, CoolMOS, High Efficiency, Low RDS(on), Thermal Performance

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