**HMC733LC4BTR: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier for 24-38 GHz Applications**

The relentless drive for higher data rates and greater network capacity in modern communication and radar systems has pushed operational frequencies into the millimeter-wave (mmWave) spectrum. **Operating within the critical Ka-band and upper K-band (24-38 GHz)**, this spectrum is essential for 5G infrastructure, satellite communications, high-resolution radar, and point-to-point radio links. **A fundamental component in any receiver chain operating at these frequencies is the low noise amplifier (LNA)**, whose primary role is to amplify weak signals while introducing the absolute minimum amount of additional noise. The **HMC733LC4BTR from Analog Devices Inc. stands out as a premier solution**, engineered to deliver exceptional performance in this demanding frequency range.

Fabricated using an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) process**, the HMC733LC4BTR is a monolithic microwave integrated circuit (MMIC) that embodies high performance in a compact form factor. This technology is chosen for its superior electron mobility compared to silicon, which directly translates into higher gain and lower noise figure at microwave and mmWave frequencies. The monolithic integration ensures high reliability and repeatability while minimizing the parasitic effects that can degrade performance in discrete solutions.

The electrical characteristics of the HMC733LC4BTR are impressive. **It boasts an exceptionally low noise figure of just 2.0 dB** across a significant portion of its bandwidth, which is a key metric for an LNA as it directly impacts the receiver's sensitivity and its ability to discern weak signals from the inherent noise floor. **Complementing this low noise figure is a high gain of 22 dB**, which helps to suppress the noise contribution from subsequent stages in the receiver chain. Furthermore, the amplifier delivers a strong output power performance, with a typical output IP3 of +22 dBm, ensuring excellent linearity and the ability to handle interfering signals without significant distortion.

Housed in a RoHS-compliant, **4x4 mm leadless chip carrier (LCC) package**, the HMC733LC4BTR is designed for surface-mount technology (SMT), facilitating automated assembly and making it suitable for high-volume manufacturing. Its small size is critical for designing compact modules and systems where board real estate is at a premium. The device is also **equipped with an integrated bias network**, simplifying the external circuitry required to power the amplifier. It typically operates from a single positive supply voltage, with an integrated negative voltage gate supply generator, further reducing the complexity of the design-in process.

In application, the HMC733LC4BTR is an ideal candidate for the front-end of a variety of sensitive receivers. Its combination of low noise and high gain makes it perfect for **satellite communication (SATCOM) terminals, automotive radars, and 5G millimeter-wave base stations**. Whether used as a gain block in a transceiver module or as the critical first amplifier in a radar receiver, its performance ensures enhanced system range, clarity, and reliability.

**ICGOOODFIND:** The HMC733LC4BTR is a high-performance, industry-leading GaAs pHEMT MMIC LNA that sets a benchmark for low noise and high gain in the 24-38 GHz frequency band. Its robust design, exceptional linearity, and integration into a compact SMT package make it an indispensable component for advancing next-generation mmWave communication and sensing systems.

**Keywords:** Low Noise Amplifier (LNA), Millimeter-wave (mmWave), GaAs pHEMT, Ka-band, Monolithic Microwave Integrated Circuit (MMIC)