Infineon IRF5210STRRPBF P-Channel Power MOSFET: Datasheet, Application Circuit, and Replacement Guide
The Infineon IRF5210STRRPBF is a robust P-Channel power MOSFET designed for a wide range of power management and switching applications. Leveraging Infineon's advanced process technology, this component is engineered for high efficiency and reliability, making it a popular choice in automotive, industrial, and consumer electronics systems where control of positive voltage rails is required.
Datasheet Overview and Key Specifications
The datasheet for the IRF5210STRRPBF reveals a component built for performance. Key electrical characteristics include a drain-source voltage (VDS) of -100 V and a continuous drain current (ID) of -18 A at 25°C. Its defining feature is an exceptionally low on-state resistance (RDS(on)) of just 27 mΩ (max. at VGS = -10 V), which is instrumental in minimizing conduction losses and improving overall system efficiency. The device comes in a space-efficient D2PAK (TO-263) surface-mount package, offering a good balance between power handling capability and board space. The logic-level threshold voltage allows it to be driven directly from 5V or 3.3V microcontroller GPIO pins in many scenarios, simplifying circuit design.
Typical Application Circuit
A common application for a P-Channel MOSFET like the IRF5210STRRPBF is as a high-side switch. This configuration is frequently used for load switching, where the MOSFET connects or disconnects a load from its power supply.
A basic high-side switch circuit is straightforward:
The source (S) is connected to the positive supply rail (e.g., +12V).
The drain (D) is connected to the positive terminal of the load.
The gate (G) is controlled by a driver signal, often from a microcontroller.
To ensure robust switching, a gate driver circuit is recommended. A simple method uses an NPN bipolar junction transistor (BJT) as a level shifter. When the MCU output is LOW, the BJT is off, and a pull-up resistor pulls the gate to the source voltage, turning the MOSFET OFF. When the MCU output is HIGH, the BJT turns on, pulling the gate to ground. This creates the necessary VGS of -12V to fully enhance the MOSFET and turn it ON, allowing current to flow to the load. A Zener diode is often placed between the gate and source to protect against voltage spikes exceeding the maximum VGS rating (±20V).
Replacement and Cross-Reference Guide
When the IRF5210STRRPBF is unavailable, selecting a suitable replacement requires careful comparison of key parameters to ensure compatibility and performance.
1. P-Channel Type: The replacement must be a P-Channel MOSFET.
2. Voltage Rating: The VDSS should be at least -100V. A higher rating is acceptable and provides more margin.
3. Current Rating: The ID should be -18A or higher.
4. RDS(on): This is critical for efficiency. Aim for a similar or lower value at the same gate-to-source voltage.
5. Package: The D2PAK package is common. Ensure the pinout (S-G-D) is identical.
Potential alternative components include:
STMicroelectronics STP18P10F6: (-100V, -18A, 90mΩ)
Vishay Siliconix SUP90118EL: (-100V, -18A, 45mΩ)
ON Semiconductor NDP6020P: (-100V, -20A, 85mΩ)
Always consult the respective datasheets to verify all parameters, including gate charge and switching characteristics, especially for high-frequency applications.
ICGOODFIND Summary
The Infineon IRF5210STRRPBF stands out as a highly efficient P-Channel MOSFET due to its very low on-resistance and high current capability. It is an excellent component for designers looking to minimize power loss in high-side switching applications across various industries. When seeking a replacement, meticulous attention to voltage, current, and RDS(on) specifications is paramount to maintaining system integrity.
Keywords: P-Channel MOSFET, High-Side Switch, Low RDS(on), Load Switching, Power Management
