Infineon IKQ75N120CS6: A High-Performance 1200V IGBT for Advanced Power Switching Applications
The relentless pursuit of efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor switching technologies. At the forefront of this evolution is the IGBT (Insulated Gate Bipolar Transistor), a cornerstone for medium to high-power applications. The Infineon IKQ75N120CS6 stands out as a prime example of a high-performance 1200V IGBT engineered to meet the demanding requirements of modern power conversion systems.
This device is specifically designed for advanced switching applications, including industrial motor drives, renewable energy systems (such as solar inverters and wind power converters), Uninterruptible Power Supplies (UPS), and welding equipment. Its robust 1200V voltage rating provides a sufficient safety margin for operation in 600V and 690V bus systems, ensuring reliable performance even under voltage spikes and transient conditions.
A key highlight of the IKQ75N120CS6 is its exceptionally low VCE(sat) of 1.95V (typical at 75A, 25°C). This low on-state voltage drop directly translates to reduced conduction losses, which is paramount for achieving high system efficiency and minimizing heat generation. When combined with its fast switching capabilities, this IGBT strikes an optimal balance between switching and conduction losses, a critical factor for high-frequency operation.
The device leverages Infineon's advanced TrenchStop® technology. This proprietary cell structure enhances overall performance by minimizing saturation voltage and improving switching behavior. It effectively tailors the electric field distribution within the silicon, leading to a reduced trade-off between switching losses and conduction losses. Furthermore, the IKQ75N120CS6 features a positive temperature coefficient, which simplifies the paralleling of multiple devices for higher current applications, as it promotes even current sharing and thermal stability.
Housed in a TO-247 package, this IGBT offers a high maximum operating junction temperature (Tvjop) of 175°C and excellent thermal cycling capability. This ruggedness ensures long-term reliability and durability in harsh operating environments. The integrated anti-parallel emitter-controlled diode also provides robust and soft reverse recovery characteristics, essential for inductive load switching.
ICGOOFind: The Infineon IKQ75N120CS6 is a superior 1200V IGBT that delivers a powerful combination of high efficiency, robustness, and fast switching speed. Its advanced TrenchStop® technology and optimized parameters make it an ideal solution for designers aiming to push the boundaries of performance and reliability in advanced power switching applications.
Keywords: IGBT, TrenchStop® Technology, Low VCE(sat), 1200V, Power Switching
